- 制造厂商：TI
- 产品类别：电源管理
- 技术类目：MOSFET - N 沟道 MOSFET
- 功能描述：采用 5mm x 6mm SON 封装的单路、8.1mΩ、30V、N 沟道 NexFET 功率 MOSFET
- 点击这里打开及下载CSD17522Q5A的技术文档资料
- TI代理渠道，提供当日发货、严格的质量标准，满足您的目标价格
此 NexFET 功率 MOSFET 专为最大限度地减少功率转换应用中的损耗而设计，并针对 5V 栅极驱动应用进行了优化。
- 针对 5V 栅极驱动而优化
- 超低 Qg 和 Qgd
- 低热阻
- 雪崩额定
- 无铅终端镀层
- 符合 RoHS 标准
- 无卤素
- SON 5 毫米 × 6 毫米塑料封装
- VDS (V)
- 30
- Configuration
- Single
- Rds(on) max at VGS=4.5 V (mOhms)
- 12.4
- Rds(on) max at VGS=10 V (mOhms)
- 8.1
- IDM - pulsed drain current (Max) (A)
- 104
- QG typ (nC)
- 3.6
- QGD typ (nC)
- 1.1
- QGS typ (nC)
- 1.6
- Package (mm)
- SON5x6
- VGS (V)
- 20
- VGSTH typ (V)
- 1.6
- ID - silicon limited at Tc=25degC (A)
- 87
- ID - package limited (A)
- 87
- Logic level
- Yes
CSD17522Q5A的完整型号有：CSD17522Q5A，以下是这些产品的关键参数及官网采购报价：
CSD17522Q5A，工作温度：-55 to 150，封装： (DQJ)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网CSD17522Q5A的批量USD价格：0.358（1000+）
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The TPS51120EVM-001 evaluation module utilizes the TPS51120 in a high efficiency, dual synchronous buck converter providing 5V at 6A and 3.3V at 6A from 8V to 25V input. The user’s guide describes the TPS51120EVM-001 performance in D-CAP™ mode and RDS(on) current sensing.
The TPS51120 is a (...)
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