The DRV8353M family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV8353M uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through V_GS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

• 9 to 100-V, Triple half-bridge gate driver

  • Extended TA operation -55 °C to 125 °C

  • Optional triple low-side current shunt amplifiers
• Smart gate drive architecture
  • Adjustable slew rate control for EMI performance
  • VGS handshake and minimum dead-time insertion to prevent shoot-through
  • 50-mA to 1-A peak source current
  • 100-mA to 2-A peak sink current
  • dV/dt mitigation through strong pulldown
• Integrated gate driver power supplies
  • High-side doubler charge pump For 100% PWM duty cycle control
  • Low-side linear regulator
• Integrated triple current shunt amplifiers
  • Adjustable gain (5, 10, 20, 40 V/V)
  • Bidirectional or unidirectional support
• 6x, 3x, 1x, and independent PWM modes
  • Supports 120° sensored operation
• SPI or hardware interface available
• Low-power sleep mode (20 μA at VVM = 48-V)
• Integrated protection features
  • VM undervoltage lockout (UVLO)
  • Gate drive supply undervoltage (GDUV)
  • MOSFET VDS overcurrent protection (OCP)
  • MOSFET shoot-through prevention
  • Gate driver fault (GDF)
  • Thermal warning and shutdown (OTW/OTSD)
  • Fault condition indicator (nFAULT)

• Rating
• Catalog
• Architecture
• Gate driver
• Control interface
• 1xPWM, 3xPWM, 6xPWM
• Gate drive (A)
• 1
• Vs (Min) (V)
• 9
• Vs ABS (Max) (V)
• 102
• Features
• Current Sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive
• Operating temperature range (C)
• -55 to 125

DRV8353M的完整型号有：DRV8353HMRTAT、DRV8353SMRTAT，以下是这些产品的关键参数及官网采购报价：

DRV8353HMRTAT，工作温度：-55 to 125，封装：WQFN (RTA)-40，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网DRV8353HMRTAT的批量USD价格：11（1000+）

DRV8353SMRTAT，工作温度：-55 to 125，封装：WQFN (RTA)-40，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网DRV8353SMRTAT的批量USD价格：11.55（1000+）

DRV8353RH-EVM — DRV8353RH evaluation module, three-phase brushless DC smart gate driver

DRV8353RH-EVM 是基于 DRV8353RH 栅极驱动器和 CSD19532Q5B NexFET™ MOSFET 的 15A 三相无刷直流驱动级。

该模块具有单独的直流总线和相电压感应以及单独的低侧电流分流放大器，因此该评估模块非常适合无传感器 BLDC 算法。该模块通过集成式 0.35A 降压转换器为 MCU 提供 3.3V 电源。该驱动级具有 IDRIVE 配置和故障引脚，并通过具有特定电阻值的易于配置的硬件接口提供短路、过热、击穿和欠压保护。

DRV8353RS-EVM — DRV8353RS evaluation module,three-phase brushless DC smart gate driver

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)