The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

• Drives Both a High-Side and Low-Side N-Channel MOSFETs
• Independent High- and Low-Driver Logic Inputs
• Bootstrap Supply Voltage up to 118 V DC
• Fast Propagation Times (25-ns Typical)
• Drives 1000-pF Load With 8-ns Rise and Fall Times
• Excellent Propagation Delay Matching (3-ns Typical)
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• Pin Compatible With HIP2100/HIP2101

• Bus voltage (Max) (V)
• 100
• Power switch
• MOSFET
• Input VCC (Min) (V)
• 9
• Input VCC (Max) (V)
• 14
• Peak output current (A)
• 2
• Rise time (ns)
• 10
• Operating temperature range (C)
• -40 to 125
• Undervoltage lockout (Typ)
• 8
• Rating
• Catalog
• Number of channels (#)
• 2
• Fall time (ns)
• 10
• Prop delay (ns)
• 25
• Iq (uA)
• 10
• Input threshold
• TTL
• Channel input logic
• TTL
• Negative voltage handling at HS pin (V)
• -1
• Features
• —
• Driver configuration
• Dual, Independent

LM5101B的完整型号有：LM5101BMA/NOPB、LM5101BMAX/NOPB、LM5101BSD/NOPB、LM5101BSDX/NOPB，以下是这些产品的关键参数及官网采购报价：

LM5101BMA/NOPB，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：95个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网LM5101BMA/NOPB的批量USD价格：1.584（1000+）

LM5101BMAX/NOPB，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：Call TI，TI官网LM5101BMAX/NOPB的批量USD价格：1.32（1000+）

LM5101BSD/NOPB，工作温度：-40 to 125，封装：WSON (DPR)-10，包装数量MPQ：1000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网LM5101BSD/NOPB的批量USD价格：1.584（1000+）

LM5101BSDX/NOPB，工作温度：-40 to 125，封装：WSON (DPR)-10，包装数量MPQ：4500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网LM5101BSDX/NOPB的批量USD价格：1.32（1000+）

LM5101B TINA-TI Transient Reference Design

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LM51xx Schematic Review Template

此参考设计是一款专为低频（基于变压器）单相 UPS（由 12V 电池供电）设计的 650W 逆变器功率级。此设计凭借采用 SON5x6 封装且具有极低 RDS(on) 和低栅极电荷 (Qg) 的 TI SMD MOSFET，实现小外形尺寸和高效率的解决方案。通过在全桥功率级的每个桥臂上并联使用两个器件，该功率级消除了散热器需求，从而降低了总体系统成本。