The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

• LM5112-Q1 is Qualified for Automotive Applications
• AEC-Q100 Grade 1 Qualified
• Manufactured on an Automotive Grade Flow
• Compound CMOS and Bipolar Outputs Reduce Output Current Variation
• 7-A Sink and 3-A Source Current
• Fast Propagation Times: 25 ns (Typical)
• Fast Rise and Fall Times: 14 ns or 12 ns Rise or Fall With 2-nF Load
• Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
• Supply Rail Undervoltage Lockout Protection
• Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
• Power Enhanced 6-Pin WSON Package (3 mm × 3 mm) or Thermally Enhanced MSOP-PowerPAD Package
• Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

• Number of channels (#)
• 1
• Power switch
• MOSFET
• Peak output current (A)
• 7
• Input VCC (Min) (V)
• 3.5
• Input VCC (Max) (V)
• 14
• Features
• Negative Output Voltage Capability
• Operating temperature range (C)
• -40 to 125
• Rise time (ns)
• 14
• Fall time (ns)
• 12
• Prop delay (ns)
• 25
• Input threshold
• TTL
• Channel input logic
• Inverting, Non-Inverting
• Input negative voltage (V)
• 0
• Rating
• Automotive
• Undervoltage lockout (Typ)
• 3
• Driver configuration
• Single

LM5112-Q1的完整型号有：LM5112Q1SD/NOPB、LM5112Q1SDX/NOPB，以下是这些产品的关键参数及官网采购报价：

LM5112Q1SD/NOPB，工作温度：-40 to 125，封装：WSON (NGG)-6，包装数量MPQ：1000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网LM5112Q1SD/NOPB的批量USD价格：.592（1000+）

LM5112Q1SDX/NOPB，工作温度：-40 to 125，封装：WSON (NGG)-6，包装数量MPQ：4500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网LM5112Q1SDX/NOPB的批量USD价格：.506（1000+）

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