The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available V_CC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (V_DS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the V_DS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
  • Device HBM ESD Classification Level 2
  • Device CDM ESD Classification Level C4B
• Withstands 60-V Supply Transients
• Overvoltage Shut-OFF With VCC > 30 V
• Lossless Overcurrent Protection Latch-OFF
  • Current Sense Resistor is Not Required
  • Minimizes Power Loss With High Current Loads
• Programmable Delay of Protection Latch-OFF
• Gradual Turnoff to Minimize Inductive Load Transient Voltages
• CMOS Logic-Compatible ON and OFF Control Input

• FET
• External
• Vin (Min) (V)
• 7
• Vin (Max) (V)
• 26
• Vabsmax_cont (V)
• 60
• Current limit (Min) (A)
• 0.01
• Current limit (Max) (A)
• 500
• Overcurrent response
• Circuit breaker, Current limiting
• Fault response
• Latch-off

LM9061-Q1的完整型号有：LM9061QDRQ1，以下是这些产品的关键参数及官网采购报价：

LM9061QDRQ1，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-3-260C-168HRS，引脚镀层/焊球材料：NIPDAU，TI官网LM9061QDRQ1的批量USD价格：1.313（1000+）

LM9061EVM — LM9061EVM 高侧保护控制器评估模块

LM9061EVM 评估模块演示的是接电负载的高侧保护，用于防护过流和过压的情况。高侧 MOSFET 的栅极驱动由一个开/关输入控制。过流保护会在从 MOSFET 中监测到压降 (VDS) 时启用，压降参考的是外部可编程阈值电压。如果 VDS 电压因过高的负载电流而超出阈值电压，MOSFET 的栅极驱动就会关闭，从而断开负载与输入电源的连接。与负载串联的电流感应电阻器并非保护电路所必需，这样可以在较高的电流负载下获得更高的性能。

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice

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PMP9498 — 具有过流和过压关断功能的汽车类电池反向保护参考设计

PMP9498 是一套完整的前端保护解决方案，适用于需要反向电压、过压或过流保护的汽车系统。它还实现了负载开关功能，能够以数字方式控制负载与输入电源的连接和断开。该设计可满足汽车应用在关闭期间的低 Iq 要求，并且采用了强大的栅极电流源（典型值 30mA），可驱动大功率 MOSFET，因此适合高电流应用。