The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

• AEC-Q100 grade 1 qualified
• 1.25-ns typical minimum input pulse width
• 2.6-ns typical rising propagation delay
• 2.9-ns typical falling propagation delay
• 300-ps typical pulse distortion
• Independent 7-A pull-up and 5-A pull-down current
• 650-ps typical rise time (220-pF load)
• 850-ps typical fall time (220-pF load)
• 2-mm x 2-mm QFN package
• Inverting and non-inverting inputs
• UVLO and over-temperature protection
• Single 5-V supply voltage

• Number of channels (#)
• 1
• Power switch
• MOSFET, GaNFET
• Peak output current (A)
• 7
• Input VCC (Min) (V)
• 4.75
• Input VCC (Max) (V)
• 5.25
• Features
• 1.25-ns Pulse Width
• Operating temperature range (C)
• -40 to 125
• Rise time (ns)
• 0.65
• Fall time (ns)
• 0.85
• Prop delay (ns)
• 2.9
• Input threshold
• CMOS, TTL
• Channel input logic
• TTL
• Input negative voltage (V)
• 0
• Rating
• Automotive
• Undervoltage lockout (Typ)
• 4.19
• Driver configuration
• Dual inputs

LMG1025-Q1的完整型号有：LMG1025QDEERQ1、LMG1025QDEETQ1，以下是这些产品的关键参数及官网采购报价：

LMG1025QDEERQ1，工作温度：-40 to 125，封装：WSON (DEE)-6，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：SN，TI官网LMG1025QDEERQ1的批量USD价格：2.137（1000+）

LMG1025QDEETQ1，工作温度：-40 to 125，封装：WSON (DEE)-6，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：SN，TI官网LMG1025QDEETQ1的批量USD价格：2.499（1000+）

LMG1020EVM-006 — LMG1020 GaN 低侧驱动器 + GaN FET 激光雷达评估模块

LMG1020EVM-006 是一种具有集成电阻负载（不包括激光器）的小型易用功率级。它采用可进行缓冲（并进一步缩短）或直接传输到该功率级的短脉冲输入。

LMG1025-Q1EVM — LMG1025-Q1 GaN low-side driver and GaN FET LiDAR evaluation module

The LMG1025-Q1EVM is a small, easy-to-use power stage with integrated resistive load (laser not included). It takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage.

LMG1020 PSpice Transient Model (Rev. C)

PSpice for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助?PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。

在?PSpice for TI 设计和仿真工具中，您可以搜索 TI (...)

LMG1025-Q1 Schematic Review Template

此激光雷达 (LiDAR) 参考设计展示了适用于窄脉冲应用的 LMG1020 和 LMG1025-Q1 低侧栅极驱动器。这些器件能够驱动 FET 产生功率大于 100W、脉宽小于 1.5ns 的激光脉冲。