- 制造厂商:TI
- 产品类别:逻辑和电压转换
- 技术类目:缓冲器、驱动器和收发器 - 同相缓冲器和驱动器
- 功能描述:具有施密特触发输入的单路 0.8V 至 3.6V 低功耗缓冲器
- 点击这里打开及下载SN74AUP1G17的技术文档资料
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The AUP family of devices is TIs premier solution to the industrys low-power needs in battery-powered portable applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in increased battery life. This product also maintains excellent signal integrity (see AUP – The Lowest-Power Family and Excellent Signal Integrity).
This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching-noise immunity at the input.
NanoStar™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Available in the Texas Instruments NanoStar? Package
- Low Static-Power Consumption (ICC = 0.9 μA Maximum)
- Low Dynamic-Power Consumption (Cpd = 4.4 pF Typical at 3.3 V)
- Low Input Capacitance (Ci = 1.5 pF Typical)
- Low Noise – Overshoot and Undershoot <10% of VCC
- Ioff Supports Partial-Power-Down Mode Operation
- Includes Schmitt-Trigger Inputs
- Wide Operating VCC Range of 0.8 V to 3.6 V
- Optimized for 3.3-V Operation
- 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
- tpd = 5.1 ns Maximum at 3.3 V
- Suitable for Point-to-Point Applications
- Technology Family
- AUP
- Supply voltage (Min) (V)
- 0.8
- Supply voltage (Max) (V)
- 3.6
- Number of channels (#)
- 1
- IOL (Max) (mA)
- 4
- ICC (Max) (uA)
- 0.9
- IOH (Max) (mA)
- -4
- Input type
- Schmitt-Trigger
- Output type
- Push-Pull
- Features
- Balanced outputs, Very high speed (tpd 5-10ns), Partial power down (Ioff), Over-voltage tolerant inputs
- Rating
- Catalog
SN74AUP1G17的完整型号有:SN74AUP1G17DBVR、SN74AUP1G17DBVRG4、SN74AUP1G17DBVT、SN74AUP1G17DCKR、SN74AUP1G17DCKT、SN74AUP1G17DPWR、SN74AUP1G17DRLR、SN74AUP1G17DRYR、SN74AUP1G17DSFR、SN74AUP1G17YFPR、SN74AUP1G17YZPR,以下是这些产品的关键参数及官网采购报价:
SN74AUP1G17DBVR,工作温度:-40 to 85,封装:SOT-23 (DBV)-5,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:SN,TI官网SN74AUP1G17DBVR的批量USD价格:.106(1000+)
SN74AUP1G17DBVRG4,工作温度:-40 to 85,封装:SOT-23 (DBV)-5,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DBVRG4的批量USD价格:.122(1000+)
SN74AUP1G17DBVT,工作温度:-40 to 85,封装:SOT-23 (DBV)-5,包装数量MPQ:250个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:SN,TI官网SN74AUP1G17DBVT的批量USD价格:.306(1000+)
SN74AUP1G17DCKR,工作温度:-40 to 85,封装:SC70 (DCK)-5,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DCKR的批量USD价格:.066(1000+)
SN74AUP1G17DCKT,工作温度:-40 to 85,封装:SC70 (DCK)-5,包装数量MPQ:250个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DCKT的批量USD价格:.306(1000+)
SN74AUP1G17DPWR,工作温度:-40 to 85,封装:X2SON (DPW)-5,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DPWR的批量USD价格:.117(1000+)
SN74AUP1G17DRLR,工作温度:-40 to 85,封装:SOT-5X3 (DRL)-5,包装数量MPQ:4000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DRLR的批量USD价格:.127(1000+)
SN74AUP1G17DRYR,工作温度:-40 to 85,封装:SON (DRY)-6,包装数量MPQ:5000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAUAG,TI官网SN74AUP1G17DRYR的批量USD价格:.117(1000+)
SN74AUP1G17DSFR,工作温度:-40 to 85,封装:SON (DSF)-6,包装数量MPQ:5000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网SN74AUP1G17DSFR的批量USD价格:.127(1000+)
SN74AUP1G17YFPR,工作温度:PropertyValue,封装:DSBGA (YFP)-4,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:SNAGCU,TI官网SN74AUP1G17YFPR的批量USD价格:.166(1000+)
SN74AUP1G17YZPR,工作温度:-40 to 85,封装:DSBGA (YZP)-5,包装数量MPQ:3000个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:SNAGCU,TI官网SN74AUP1G17YZPR的批量USD价格:.176(1000+)
5-8-LOGIC-EVM — 支持 5 至 8 引脚 DCK、DCT、DCU、DRL 和 DBV 封装的通用逻辑 EVM
灵活的 EVM 设计用于支持具有 5 至 8 引脚数且采用 DCK、DCT、DCU、DRL 或 DBV 封装的任何器件。SN74AUP1G17 IBIS Model (Rev. B)
采用 MOSFET 参考设计的自供电交流固态继电器是单个继电器的替代方法,可实现高效的电源管理,适用于在恒温器应用中以低功耗方式替代标准机电式继电器。此 SSR 参考设计通过 24V 交流电力线实现自供电,可省去恒温器电池的其他功耗。MOSFET 可快速切换,从而在不影响负载的情况下实现自供电。TIDA-00268 — Thunderbolt™ 单端口外设参考设计
TI Thunderbolt 单端口外设参考设计已针对具有 20Gbps 带宽的 Thunderbolt 2 系统进行优化。此设计利用 TPS65980 电源管理单元,与离散式实施相比,可将 BOM 成本降低达 50%,将面积降低约 40%。此设计已在 Intel 针对自供电和总线供电的单端口 Thunderbolt 系统进行测试和认证。