- 制造厂商：TI
- 产品类别：开关与多路复用器
- 技术类目：模拟开关和多路复用器
- 功能描述：3.3V、1:1 (SPST)、4 通道 FET 总线开关
- 点击这里打开及下载SN74CB3Q3125的技术文档资料
- TI代理渠道，提供当日发货、严格的质量标准，满足您的目标价格
The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
- High-Bandwidth Data Path (up to 500 MHz(1))
- 5-V Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ)
- Rail-to-Rail Switching on Data I/O Ports
- 0-V to 5-V Switching With 3.3-V VCC
- 0-V to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input and Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typ)
- Fast Switching Frequency (fOE = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.3 mA Typ)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0-V to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL, 5-V, or 3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface, Bus Isolation, Low-Distortion Signal Gating
- Configuration
- 1:1 SPST
- Number of channels (#)
- 4
- Power supply voltage - single (V)
- 2.5, 3.3
- Protocols
- Analog, JTAG, UART, I2C, SPI, RGMII, TDM, I2S
- Ron (Typ) (Ohms)
- 4
- CON (Typ) (pF)
- 8
- ON-state leakage current (Max) (μA)
- 1
- Bandwidth (MHz)
- 500
- Operating temperature range (C)
- -40 to 85
- Features
- Powered-off protection, Supports input voltage beyond supply
- Input/output continuous current (Max) (mA)
- 64
- Rating
- Catalog
- Supply current (Typ) (uA)
- 2000
SN74CB3Q3125的完整型号有：SN74CB3Q3125DBQR、SN74CB3Q3125DGVR、SN74CB3Q3125PW、SN74CB3Q3125PWR、SN74CB3Q3125RGYR，以下是这些产品的关键参数及官网采购报价：
SN74CB3Q3125DBQR，工作温度：-40 to 85，封装：SSOP (DBQ)-16，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3125DBQR的批量USD价格：.337（1000+）
SN74CB3Q3125DGVR，工作温度：-40 to 85，封装：TVSOP (DGV)-14，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3125DGVR的批量USD价格：.306（1000+）
SN74CB3Q3125PW，工作温度：-40 to 85，封装：TSSOP (PW)-14，包装数量MPQ：90个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3125PW的批量USD价格：.367（1000+）
SN74CB3Q3125PWR，工作温度：-40 to 85，封装：TSSOP (PW)-14，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3125PWR的批量USD价格：.306（1000+）
SN74CB3Q3125RGYR，工作温度：-40 to 85，封装：VQFN (RGY)-14，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3125RGYR的批量USD价格：.337（1000+）
LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器
EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间，可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。
SN74CB3Q3125 IBIS Model (Rev. A)
此参考设计实现了具有可编程输出电压和创新智能电子保险丝技术的通用电源，可用于工业驱动器上的多标准位置编码器接口模块。电子保险丝提供浪涌电流和过流保护，以及用户可编程的过压和欠压保护，在整个工业温度范围内具有准确的限值。此设计满足 IEC61800-3 中针对 ESD、快速瞬变脉冲和浪涌而规定的 EMC 抗扰性要求。
