The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

• High-Bandwidth Data Path (Up to 500 MHz)
• Equivalent to IDTQS3VH384 Device
• 5-V Tolerant I/Os with Device Powered-Up or Powered-Down
• Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Typical)
• Rail-to-Rail Switching on Data I/O Ports
  • 0- to 5-V Switching With 3.3-V VCC
  • 0- to 3.3-V Switching With 2.5-V VCC
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
• Fast Switching Frequency (fOE\ = 20 MHz Max)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (ICC = 1 mA Typical)
• VCC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

• Configuration
• 1:1 SPST
• Number of channels (#)
• 8
• Power supply voltage - single (V)
• 2.5, 3.3
• Protocols
• Analog
• Ron (Typ) (Ohms)
• 4
• CON (Typ) (pF)
• 9
• Bandwidth (MHz)
• 500
• Operating temperature range (C)
• -40 to 85
• Features
• Powered-off protection, Supports input voltage beyond supply
• Input/output continuous current (Max) (mA)
• 64
• Rating
• Catalog
• Supply current (Typ) (uA)
• 1000

SN74CB3Q3245的完整型号有：SN74CB3Q3245DBQR、SN74CB3Q3245DGVR、SN74CB3Q3245PW、SN74CB3Q3245PWR、SN74CB3Q3245RGYR，以下是这些产品的关键参数及官网采购报价：

SN74CB3Q3245DBQR，工作温度：-40 to 85，封装：SSOP (DBQ)-20，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3245DBQR的批量USD价格：.367（1000+）

SN74CB3Q3245DGVR，工作温度：-40 to 85，封装：TVSOP (DGV)-20，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3245DGVR的批量USD价格：.334（1000+）

SN74CB3Q3245PW，工作温度：-40 to 85，封装：TSSOP (PW)-20，包装数量MPQ：70个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3245PW的批量USD价格：.401（1000+）

SN74CB3Q3245PWR，工作温度：-40 to 85，封装：TSSOP (PW)-20，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3245PWR的批量USD价格：.334（1000+）

SN74CB3Q3245RGYR，工作温度：-40 to 85，封装：VQFN (RGY)-20，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3Q3245RGYR的批量USD价格：.228（1000+）

LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器

EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间，可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。

SN74CB3Q3245 IBIS Model (Rev. A)

此参考设计实现了经成本优化且具有连接到应用处理器的 SPI 接口的高 EMC 抗扰性 EtherCAT 从站（双端口）。该硬件设计能够利用 AMIC110 工业通信处理器来支持多协议工业以太网和现场总线。该设计由 5V 单电源供电；PMIC 生成所有必要的板载轨道。EtherCAT 从堆栈可利用串行外设接口 (SPI) 在 AMIC110 上或应用处理器上运行。利用硬件开关，可对 AMIC110 进行配置，以从 SPI 闪存启动 EtherCAT 从固件，或通过 SPI 从应用处理器进行启动。该设计已通过运行 EtherCAT 主站的标准工业 PLC 进行了 IEC61800-3 EMC (...)