The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

• Output Voltage Translation Tracks VCC
• Supports Mixed-Mode Signal Operation on All Data I/O Ports
  • 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
  • 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
• 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
• Bidirectional Data Flow With Near-Zero Propagation Delay
• Low ON-State Resistance (ron) Characteristics (ron = 5 Typ)
• Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (ICC = 20 μA Max)
• VCC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 250 mA Per JESD 17
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
• Ideal for Low-Power Portable Equipment

• Configuration
• 1:1 SPST
• Number of channels (#)
• 1
• Power supply voltage - single (V)
• 2.5, 3.3
• Protocols
• Analog
• Ron (Typ) (Ohms)
• 5
• CON (Typ) (pF)
• 12
• ON-state leakage current (Max) (μA)
• 20
• Operating temperature range (C)
• -40 to 85
• Features
• Powered-off protection, Signal path translation
• Input/output continuous current (Max) (mA)
• 128
• Rating
• Catalog

SN74CB3T1G125的完整型号有：74CB3T1G125DBVRG4、SN74CB3T1G125DBVR、SN74CB3T1G125DCKR，以下是这些产品的关键参数及官网采购报价：

74CB3T1G125DBVRG4，工作温度：-40 to 85，封装：SOT-23 (DBV)-5，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网74CB3T1G125DBVRG4的批量USD价格：.437（1000+）

SN74CB3T1G125DBVR，工作温度：-40 to 85，封装：SOT-23 (DBV)-5，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T1G125DBVR的批量USD价格：.258（1000+）

SN74CB3T1G125DCKR，工作温度：-40 to 85，封装：SC70 (DCK)-5，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网SN74CB3T1G125DCKR的批量USD价格：.38（1000+）

DIP-ADAPTER-EVM — DIP 适配器评估模块

借助 DIP-Adapter-EVM 加快运算放大器的原型设计和测试，该 EVM 有助于快速轻松地连接小型表面贴装 IC 并且价格低廉。您可以使用随附的 Samtec 端子板连接任何受支持的运算放大器，或者将这些端子板直接连接至现有电路。

DIP-Adapter-EVM 套件支持六种常用的业界通用封装，包括：

• D 和 U (SOIC-8)
• PW (TSSOP-8)
• DGK（MSOP-8、VSSOP-8）
• DBV（SOT23-6、SOT23-5 和 SOT23-3）
• DCK（SC70-6 和 SC70-5）
• DRL (SOT563-6)