The SN74CB3T3384 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T3384 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3384 is organized as two 5-bit bus switches with separate ouput-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

• Output Voltage Translation Tracks VCC
• Supports Mixed-Mode Signal Operation On All Data I/O Ports
  • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
  • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
• 5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
• Low Input/Output Capacitance Minimizes Loading (Cio(OFF) - 5 pF Typical)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (ICC = 40μA Max)
• VCC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 250 mA Per JESD 17
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
• Ideal for Low-Power Portable Equipment

• Configuration
• 1:1 SPST
• Number of channels (#)
• 10
• Power supply voltage - single (V)
• 2.5, 3.3
• Protocols
• Analog
• Ron (Typ) (Ohms)
• 5
• CON (Typ) (pF)
• 4
• ON-state leakage current (Max) (μA)
• 20
• Bandwidth (MHz)
• 100
• Operating temperature range (C)
• -40 to 85
• Features
• Powered-off protection, Signal path translation
• Input/output continuous current (Max) (mA)
• 128
• Rating
• Catalog

SN74CB3T3384的完整型号有：SN74CB3T3384DBQR、SN74CB3T3384DW、SN74CB3T3384DWR、SN74CB3T3384PW、SN74CB3T3384PWR，以下是这些产品的关键参数及官网采购报价：

SN74CB3T3384DBQR，工作温度：-40 to 85，封装：SSOP (DBQ)-24，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T3384DBQR的批量USD价格：.441（1000+）

SN74CB3T3384DW，工作温度：-40 to 85，封装：SOIC (DW)-24，包装数量MPQ：25个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T3384DW的批量USD价格：.573（1000+）

SN74CB3T3384DWR，工作温度：-40 to 85，封装：SOIC (DW)-24，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T3384DWR的批量USD价格：.485（1000+）

SN74CB3T3384PW，工作温度：-40 to 85，封装：TSSOP (PW)-24，包装数量MPQ：60个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T3384PW的批量USD价格：.529（1000+）

SN74CB3T3384PWR，工作温度：-40 to 85，封装：TSSOP (PW)-24，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CB3T3384PWR的批量USD价格：.441（1000+）

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