The SN74CBT16212C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (r_on), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16212C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT16212C operates as a 24-bit bus switch, or as a 12-bit bus-exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is disabled, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

• Member of the Texas Instruments Widebus? Family
• Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 8 pF Typical)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption (ICC = 5 μA Max)
• VCC Operating Range From 4 V to 5.5 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

• Configuration
• Crosspoint/exchange
• Number of channels (#)
• 24
• Power supply voltage - single (V)
• 5
• Protocols
• Analog
• Ron (Typ) (Ohms)
• 3
• CON (Typ) (pF)
• 19
• Bandwidth (MHz)
• 200
• Operating temperature range (C)
• -40 to 85
• Features
• Powered-off protection, Undershoot protection
• Input/output continuous current (Max) (mA)
• 128
• Rating
• Catalog

SN74CBT16212C的完整型号有：SN74CBT16212CDGGR、SN74CBT16212CDGVR、SN74CBT16212CDL、SN74CBT16212CDLR，以下是这些产品的关键参数及官网采购报价：

SN74CBT16212CDGGR，工作温度：-40 to 85，封装：TSSOP (DGG)-56，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBT16212CDGGR的批量USD价格：.721（1000+）

SN74CBT16212CDGVR，工作温度：-40 to 85，封装：TVSOP (DGV)-56，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBT16212CDGVR的批量USD价格：.721（1000+）

SN74CBT16212CDL，工作温度：-40 to 85，封装：SSOP (DL)-56，包装数量MPQ：20个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBT16212CDL的批量USD价格：.865（1000+）

SN74CBT16212CDLR，工作温度：-40 to 85，封装：SSOP (DL)-56，包装数量MPQ：1000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBT16212CDLR的批量USD价格：.721（1000+）

SN74CBT16212C IBIS Model

此参考设计为级联成像雷达系统奠定了处理基础。级联雷达设备可支持前端远距离 (LRR) 波束形成应用以及角级联和侧级联雷达和传感器融合系统。此参考设计为有资质的开发人员提供了设计材料，供开发人员创建用于开发和测试 ADAS 应用的有效软件评估平台。该设计将有助于缩短基础平台的开发时间，并为多个汽车雷达前端和天线子系统提供支持。

级联开发套件具有两个主要用例：

要使用 MMWCAS-DSP-EVM 作为捕获卡，并通过 mmWave Studio 工具完整评估 AWR2243 四芯片级联性能，请查看 TIDEP-01012 设计指南。

要使用 MMWCAS-DSP-EVM 开发雷达实时 SW (...)