The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. This device features an integrated diode in series with V_CC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

• Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
• Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
• Bidirectional Data Flow, With Near-Zero Propagation Delay
• Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• VCC Operating Range From 4.5 V to 5.5 V
• Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
• Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

• Configuration
• 1:1 SPST
• Number of channels (#)
• 2
• Power supply voltage - single (V)
• 5
• Protocols
• Analog
• Ron (Typ) (Ohms)
• 3
• CON (Typ) (pF)
• 12.5
• Bandwidth (MHz)
• 20
• Operating temperature range (C)
• -40 to 85
• Features
• Undershoot protection
• Input/output continuous current (Max) (mA)
• 128
• Rating
• Catalog

SN74CBTD3306C的完整型号有：SN74CBTD3306CD、SN74CBTD3306CDR、SN74CBTD3306CPW、SN74CBTD3306CPWR、SN74CBTD3306CPWRG4，以下是这些产品的关键参数及官网采购报价：

SN74CBTD3306CD，工作温度：-40 to 85，封装：SOIC (D)-8，包装数量MPQ：75个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBTD3306CD的批量USD价格：.325（1000+）

SN74CBTD3306CDR，工作温度：-40 to 85，封装：SOIC (D)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBTD3306CDR的批量USD价格：.125（1000+）

SN74CBTD3306CPW，工作温度：-40 to 85，封装：TSSOP (PW)-8，包装数量MPQ：150个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBTD3306CPW的批量USD价格：.325（1000+）

SN74CBTD3306CPWR，工作温度：-40 to 85，封装：TSSOP (PW)-8，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：SN，TI官网SN74CBTD3306CPWR的批量USD价格：.125（1000+）

SN74CBTD3306CPWRG4，工作温度：-40 to 85，封装：TSSOP (PW)-8，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网SN74CBTD3306CPWRG4的批量USD价格：.144（1000+）

DIP-ADAPTER-EVM — DIP 适配器评估模块

借助 DIP-Adapter-EVM 加快运算放大器的原型设计和测试，该 EVM 有助于快速轻松地连接小型表面贴装 IC 并且价格低廉。您可以使用随附的 Samtec 端子板连接任何受支持的运算放大器，或者将这些端子板直接连接至现有电路。

DIP-Adapter-EVM 套件支持六种常用的业界通用封装，包括：

• D 和 U (SOIC-8)
• PW (TSSOP-8)
• DGK（MSOP-8、VSSOP-8）
• DBV（SOT23-6、SOT23-5 和 SOT23-3）
• DCK（SC70-6 和 SC70-5）
• DRL (SOT563-6)

LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器

EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间，可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。