The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-? impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
• Capable to Drive MOSFETs with ≥40-A Current per Phase
• High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
• Capable to Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
• 3-State PWM Input for Power Stage Shutdown
• Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
• Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
• High Performance Replacement for Popular 3-State Input Drivers

• Bus voltage (Max) (V)
• 24
• Power switch
• MOSFET
• Input VCC (Min) (V)
• 4.5
• Input VCC (Max) (V)
• 8
• Peak output current (A)
• 6
• Rise time (ns)
• 10
• Operating temperature range (C)
• -40 to 125
• Undervoltage lockout (Typ)
• 3.5
• Rating
• Catalog
• Number of channels (#)
• 2
• Fall time (ns)
• 5
• Prop delay (ns)
• 14
• Iq (uA)
• 350
• Input threshold
• TTL
• Channel input logic
• TTL
• Negative voltage handling at HS pin (V)
• 0
• Features
• Synchronous Rectification
• Driver configuration
• Single

TPS28225的完整型号有：TPS28225D、TPS28225DR、TPS28225DRBR、TPS28225DRBT，以下是这些产品的关键参数及官网采购报价：

TPS28225D，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：75个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网TPS28225D的批量USD价格：.665（1000+）

TPS28225DR，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网TPS28225DR的批量USD价格：.554（1000+）

TPS28225DRBR，工作温度：-40 to 125，封装：SON (DRB)-8，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS28225DRBR的批量USD价格：.554（1000+）

TPS28225DRBT，工作温度：-40 to 125，封装：SON (DRB)-8，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS28225DRBT的批量USD价格：.665（1000+）

TPS28225 PSpice Transient Model

PSpice for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

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在?PSpice for TI 设计和仿真工具中，您可以搜索 TI (...)

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