- 制造厂商：TI
- 产品类别：电源管理
- 技术类目：栅极驱动器 - 半桥驱动器
- 功能描述：具有 8V UVLO、用于同步整流的 4A、27V 半桥栅极驱动器
- 点击这里打开及下载TPS28226的技术文档资料
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The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-? impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
- Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
- Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
- Wide Power System Train Input Voltage: 3 V Up to 27 V
- Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
- Capable to Drive MOSFETs with ≥40-A Current per Phase
- High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
- Capable to Propagate <30-ns Input PWM Pulses
- Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
- 3-State PWM Input for Power Stage Shutdown
- Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
- Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
- High Performance Replacement for Popular 3-State Input Drivers
- Bus voltage (Max) (V)
- 24
- Power switch
- MOSFET
- Input VCC (Min) (V)
- 6.8
- Input VCC (Max) (V)
- 8
- Peak output current (A)
- 6
- Rise time (ns)
- 10
- Operating temperature range (C)
- -40 to 125
- Undervoltage lockout (Typ)
- 3.5
- Rating
- Catalog
- Number of channels (#)
- 2
- Fall time (ns)
- 5
- Prop delay (ns)
- 14
- Iq (uA)
- 350
- Input threshold
- TTL
- Channel input logic
- TTL
- Negative voltage handling at HS pin (V)
- 0
- Features
- Synchronous Rectification
- Driver configuration
- Single
TPS28226的完整型号有：TPS28226D、TPS28226DR、TPS28226DRBR、TPS28226DRBT，以下是这些产品的关键参数及官网采购报价：
TPS28226D，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：75个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网TPS28226D的批量USD价格：.578（1000+）
TPS28226DR，工作温度：-40 to 125，封装：SOIC (D)-8，包装数量MPQ：2500个，MSL 等级/回流焊峰值温度：Level-1-260C-UNLIM，引脚镀层/焊球材料：NIPDAU，TI官网TPS28226DR的批量USD价格：.482（1000+）
TPS28226DRBR，工作温度：-40 to 125，封装：SON (DRB)-8，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS28226DRBR的批量USD价格：.482（1000+）
TPS28226DRBT，工作温度：-40 to 125，封装：SON (DRB)-8，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS28226DRBT的批量USD价格：.578（1000+）
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