The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I²C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

• Valley Current Mode with Constant ON Time Control
• Lossless Current Sensing Scheme
• I2C Interface for VID Control and Telemetry
• Programmable I2C Addresses up to Eight Devices
• Switching Frequency up to 1 MHz
• Digital Current Monitor
• 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
• Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
• Selectable, 8-Level Current Limit
• Adjustable Output Slew Rate Control
• Default Boot Voltage: 1.00 V
• Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package

• Topology
• Half-Bridge,
• Duty cycle (Max) (%)
• 50
• Supply voltage (Max) (V)
• 28
• UVLO thresholds on/off (V)
• 2.8/2.6
• Features
• Light Load Efficiency
• Operating temperature range (C)
• -10 to 105
• Rating
• Catalog
• Frequency (Max) (kHz)
• 1000

TPS53632G的完整型号有：TPS53632GRSMR、TPS53632GRSMT，以下是这些产品的关键参数及官网采购报价：

TPS53632GRSMR，工作温度：-10 to 105，封装：VQFN (RSM)-32，包装数量MPQ：3000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS53632GRSMR的批量USD价格：3.3（1000+）

TPS53632GRSMT，工作温度：-10 to 105，封装：VQFN (RSM)-32，包装数量MPQ：250个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网TPS53632GRSMT的批量USD价格：3.96（1000+）

LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 负载点评估模块

LMG5200POLEVM-10 EVM 旨在评估 48V 至 1V 应用中的 LMG5200 GaN 功率级和 TPS53632G 半桥负载点控制器。该 EVM 将 48V-1V 转换器作为具有电流加倍器整流器的单级硬开关半桥加以实现。EVM 支持 36 至 75 伏的输入电压和高达 50A 的输出电流。该拓扑有效支持高降压比，同时提供高输出电流和可控性。

PMP4497 Schematic

此参考设计将板载变压器的匝数比从 5:1 修改为 3:1，以降低输入范围。该电路板支持 24V 至 32V 的输入电压、0.5V 至 1.0V 的输出电压和高达 40A 的输出电流。该拓扑有效支持高降压比，同时提供高输出电流和可控性。原 EVM 设计用于评估 LMG5200 GaN 半桥功率级和 TPS53632G 半桥负载点 (PoL) 控制器。该电路板通过倍流整流器将转换器作为单级硬开关半桥使用。该电路板是 LMG5200POLEVM-10 评估模块的重新设计版本。

PMP4497 — LMG5200 48V 至 1V/40A 单级转换器参考设计

PMP4497 是一款基于 GaN 的参考设计解决方案，适用于 FPGA、ASIC 等 Vcore 应用。凭借高度集成和低开关损耗，GaN 模块 LMG5200 可实现高效率单级 48V 至 1.0V 解决方案，从而取代传统的两级解决方案。此参考设计展示了与两级解决方案相比，此解决方案具有的 GaN 性能和系统优势。低成本 ER18 平面 PCB 变压器嵌于板上。此参考设计尺寸紧凑 (45mm*26mm*11mm)。还可通过优化频率和组件进一步减小尺寸。