The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 3.75-kV_RMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 V_DC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

• 4-A peak source, 6-A peak sink output
• 3-V to 18-V input VCCI range to interface with both digital and analog controllers
• Up to 25-V VDD output drive supply
• Switching parameters:
  • 19-ns typical propagation delay
  • 10-ns minimum pulse width
  • 5-ns maximum delay matching
  • 6-ns maximum pulse-width distortion
• Common-mode transient immunity (CMTI) greater than 100 V/ns
• Universal: dual low-side, dual high-side or half-bridge driver
• Programmable overlap and dead time
• Wide Body SOIC-14 (DWK) Package
  • 3.3mm spacing between driver channels
• Operating temperature range –40 to +125°C
• Surge immunity up to 12.8 kV
• Isolation barrier life >40 years
• TTL and CMOS compatible inputs
• Rejects input pulses and noise transients shorter than 5 ns
• Fast disable for power sequencing
• Qualified for automotive applications
• AEC-Q100 qualified with the following results
  • Device temperature grade 1
  • Device HBM ESD classification level H2
  • Device CDM ESD classification level C6

• Number of channels (#)
• 2
• Isolation rating (Vrms)
• 3750
• Power switch
• IGBT, MOSFET
• Peak output current (A)
• 6
• DIN V VDE V 0884-10 transient overvoltage rating (Vpk)
• 6250
• DIN V VDE V 0884-10 working voltage (Vpk)
• 2121
• Output VCC/VDD (Max) (V)
• 25
• Output VCC/VDD (Min) (V)
• 9.2
• Input VCC (Min) (V)
• 3
• Input VCC (Max) (V)
• 18
• Prop delay (ns)
• 19
• Operating temperature range (C)
• -40 to 125
• Undervoltage lockout (Typ)
• 12, 8

UCC21320-Q1的完整型号有：UCC21320QDWKQ1、UCC21320QDWKRQ1，以下是这些产品的关键参数及官网采购报价：

UCC21320QDWKQ1，工作温度：-40 to 125，封装：SOIC (DWK)-14，包装数量MPQ：40个，MSL 等级/回流焊峰值温度：Level-3-260C-168 HR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21320QDWKQ1的批量USD价格：2.318（1000+）

UCC21320QDWKRQ1，工作温度：-40 to 125，封装：SOIC (DWK)-14，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-3-260C-168 HR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21320QDWKRQ1的批量USD价格：1.982（1000+）

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