The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5-kV_RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV_PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

• 5.7-kVRMS single channel isolated gate driver
• Drives SiC MOSFETs and IGBTs up to 2121Vpk
• 33-V maximum output drive voltage (VDD-VEE)
• ±10-A drive strength and split output
• 150-V/ns minimum CMTI
• 4-A internal active Miller clamp
• 400-mA soft turn-off under fault condition
• Isolated analog sensor with PWM output for
  • Temperature sensing with NTC, PTC or thermal diode
  • High voltage DC-Link or phase voltage
• Alarm FLT on over current and reset from RST/EN
• Fast enable/disable response on RST/EN
• Rejects <40-ns noise transient and pulses on input pins
• 12-V VDD UVLO with power good on RDY
• Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
• 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
• SOIC-16 DW package with creepage and clearance distance > 8 mm
• Operating junction temperature –40°C to 150°C

• Number of channels (#)
• 1
• Isolation rating (Vrms)
• 5700
• Power switch
• IGBT, SiCFET
• Peak output current (A)
• 10
• DIN V VDE V 0884-10 transient overvoltage rating (Vpk)
• 8000
• DIN V VDE V 0884-10 working voltage (Vpk)
• 2121
• Output VCC/VDD (Max) (V)
• 33
• Output VCC/VDD (Min) (V)
• 13
• Input VCC (Min) (V)
• 3
• Input VCC (Max) (V)
• 5.5
• Prop delay (ns)
• 90
• Operating temperature range (C)
• -40 to 125
• Undervoltage lockout (Typ)
• 12

UCC21710的完整型号有：UCC21710DW、UCC21710DWR，以下是这些产品的关键参数及官网采购报价：

UCC21710DW，工作温度：-40 to 125，封装：SOIC (DW)-16，包装数量MPQ：40个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21710DW的批量USD价格：2.857（1000+）

UCC21710DWR，工作温度：-40 to 125，封装：SOIC (DW)-16，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-2-260C-1 YEAR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21710DWR的批量USD价格：2.381（1000+）

UCC21710QDWEVM-025 — 适用于 SiC 和 IGBT 晶体管及电源模块的驱动和保护评估板

UCC21710QDWEVM-025 是一个紧凑的单通道隔离式栅极驱动器板，可提供采用 150 x 62 x 17mm 和 106 x 62 x 30mm 封装的 SiC MOSFET 和 Si IGBT 电源模块所需的驱动电压、偏置电压、保护和诊断功能。此 TI EVM 以 5.7kVrms 增强型隔离驱动器 UCC21710 为基础，后者采用 SOIC-16DW 封装，具有 8.0mm 爬电距离和间隙。该 EVM 包含基于 SN6505B 的隔离式直流/直流变压器偏置电源。

UCC21710 PSpice Transient Model

PSpice for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助?PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。

在?PSpice for TI 设计和仿真工具中，您可以搜索 TI (...)

UCC217xxEVM Design Files

此参考设计展示了 UCC21732 栅极驱动器与 UCC14xxx 系列偏置电源的组合。此设计可用于驱动各种功率管，包括直接连接到 Wolfspeed 碳化硅 (SiC) 场效应晶体管 (FET) 模块。此参考设计可用作高侧或低侧驱动器，也可使用容性模拟负载进行测试。