The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 700-V_RMS working voltage with longer than 40 years isolation barrier life, 6-kV_PK surge immunity, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

• 3-kVRMS single channel isolated gate driver
• AEC-Q100 qualified for automotive applications
• Drives SiC MOSFETs and IGBTs up to 990Vpk
• 33-V maximum output drive voltage (VDD-VEE)
• High peak drive current and high CMTI
• ±10-A drive strength and split output
• 150-V/ns minimum CMTI
• 200-ns response time fast DESAT protection
• 4-A internal active Miller clamp
• 400-mA soft turn-off under fault conditions
• Isolated analog sensor with PWM output for
  • Temperature sensing with NTC, PTC or thermal diode
  • High voltage DC-Link or phase voltage
• Alarm FLT on over current and reset from RST/EN
• Fast enable/disable response on RST/EN
• Rejects <40-ns noise transients and pulses on input pins
• 12-V VDD UVLO with power good on RDY
• Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
• 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
• SOIC-16 DW package with creepage and clearance distance > 8mm
• Operating junction temperature –40°C to +150°C
• Safety-related certifications (Planned):
  • 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01
  • 3-kVRMS isolation for 1 minute per UL 1577

• Number of channels (#)
• 1
• Isolation rating (Vrms)
• 3000
• Power switch
• IGBT, SiCFET
• Peak output current (A)
• 10
• DIN V VDE V 0884-10 transient overvoltage rating (Vpk)
• 8400
• DIN V VDE V 0884-10 working voltage (Vpk)
• 990
• Output VCC/VDD (Max) (V)
• 33
• Output VCC/VDD (Min) (V)
• 13
• Input VCC (Min) (V)
• 3
• Input VCC (Max) (V)
• 5.5
• Prop delay (ns)
• 90
• Operating temperature range (C)
• -40 to 150
• Undervoltage lockout (Typ)
• 12

UCC21759-Q1的完整型号有：UCC21759QDWQ1、UCC21759QDWRQ1，以下是这些产品的关键参数及官网采购报价：

UCC21759QDWQ1，工作温度：-40 to 150，封装：SOIC (DW)-16，包装数量MPQ：40个，MSL 等级/回流焊峰值温度：Level-3-260C-168 HR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21759QDWQ1的批量USD价格：2.932（1000+）

UCC21759QDWRQ1，工作温度：-40 to 150，封装：SOIC (DW)-16，包装数量MPQ：2000个，MSL 等级/回流焊峰值温度：Level-3-260C-168 HR，引脚镀层/焊球材料：NIPDAU，TI官网UCC21759QDWRQ1的批量USD价格：2.443（1000+）

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